Type
Technology Technical Session
Abstract
This paper demonstrates 22nm FeRAM arrays featuring for the first time at this node 3D HZO ferroelectric capacitors (FeCap), BEOL-integrated with 2 different schemes. Array functionality with gaussian bit distributions is reported down to 0.047µm² 1T-1C bitcell at 1.3V with bitcells featuring a logic transistor and a 0.0078 µm² footprint 3D FeCap with an aspect ratio (AR) of about 4:1. To improve further both MW and density, 17:1 AR 7nm HZO 3D FeCaps with 0.0028µm² footprint are demonstrated with measured remanent polarization 2.Pr of 1100µC/cm² (normalized by footprint) at 1.5V and wake-up free behavior in agreement with a ~80% orthorhombic phase fraction as measured by precession electron diffraction (PED). These results pave the way to ultra-dense embedded FeRAM at nodes below 22nm.
